(China (Mainland))
Product Summary
The RZ1214B35Y is an NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. It is suitable for Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
Parametrics
RZ1214B35Y absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 65 V; (2)VCEO collector-emitter voltage open base: 15 V; (3)VCES collector-emitter voltage : 60 V; (4)VEBO emitter-base voltage open collector: 3V; (5)IC collector current (DC): 3A; (6)Ptot total power dissipation: 125 W; (7)Tstg storage temperature: -65 +200℃; (8)Tj operating junction temperature: 200℃.
Features
RZ1214B35Y features: (1)Interdigitated structure provides high emitter efficiency; (2)Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR; (3)Gold metallization realizes very stable characteristics and excellent lifetime; (4)Multicell geometry gives good balance of dissipated power and low thermal resistance; (5)Internal input matching ensures good stability and allows an easier design of wideband circuits.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 RZ1214B35Y |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
RZ1214B35Y |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
RZ1214B65Y |
Other |
|
Data Sheet |
Negotiable |
|
||||
