Product Summary

The BSM100GD120DLC is an IGBT module.

Parametrics

BSM100GD120DLC maximum ratings: (1)Chip temperature Tj: + 150 ℃; (2)Storage temperature Tstg: -40 to + 150 ℃; (3)Thermal resistance, chip case RthJC: 0.19 to 0.36 K/W; (4)thermal resistance, case to heatsink: 0,009 K/W; (5)maximum junction temperature: 150℃; (6)operation temperature: -40 to 125℃.

Features

BSM100GD120DLC features: (1)collector-emitter saturation voltage: 2.4 to 2.9 V; (2)gate threshold voltage, VGE(th): 4.5 to 6.5 V; (3)gate charge VGE = -15V to +15V QG: 1,1μC; (4)input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 6.5nF; (5)reverse transfer capacitance: 0.42 nF; (6)gate-emitter leakage current: 400 nA.

Diagrams

BSM100GD120DLC diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM100GD120DLC
BSM100GD120DLC

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0-6: $133.27
6-10: $119.94
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0-1: $82.74
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